Nanomaterials (Basel, Switzerland)
Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing.
An-Chieh Shih, Yi-Hao Zhan, Albert Chin
Published: 202610.3390/nano16020133
Abstract
At an ultra-thin 3 nm SnO2 channel thickness, a record-high effective mobility (µeff) of 301 cm2/V·s, field-effect mobility (µFE) of 304 cm2/V·s, and a sharp subthreshold swing (SS) of 201 mV/decade are achieved at a high carrier density (Ne) of 5 ×…
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