Micromachines
Research on Stress Variations During the 4H-SiC Indentation Process.
Wenshan Wang, Shuixing Lin, Yiqing Yu, Nian Duan
Published: 202610.3390/mi17010138
Abstract
In order to explore the effect of stress on the damage of 4H-SiC materials, this paper employed single abrasive grain indentation simulation based on the Smoothed-Particle Hydrodynamics (SPH) method, and verified the accuracy of the indentation model…
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