Micromachines
Hafnium-Based Ferroelectric Diodes for Logic-in-Memory Application.
Shuo Han, Yefan Zhang, Xi Wang, Peiwen Tong, Chuanzhi Liu, Qimiao Zeng, Jindong Liu, Xiao Huang, Qingjiang Li, Rongrong Cao, Wei Wang
Published: 202610.3390/mi17010108
Abstract
Due to the Von Neumann bottleneck of traditional CMOS computing, there is an urgent need to develop in-memory logic devices with low power consumption. In this work, we demonstrate ferroelectric diode devices based on the TiN/Hf0.5Zr0.5O2/HfO2/TiN st…
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