Silicon-Based Nanomaterials in Chronic Wound Healing: Mechanisms, Therapeutic Applications, and Clinical Prospects.

Silicon-based nanosystems are emerging as promising nanotherapeutic platforms in the biomedical field, particularly for the treatment of chronic wounds. These materials possess several advantageous features. They offer excellent drug-loading capacity, controlled and stimuli-responsive drug release, and highly customizable structures and functions. These characteristics make them well-suited for personalized therapeutic approaches.This review provides a comprehensive summary of recent advances in the application of silicon-based nanosystems in wound healing. It highlights their mechanisms of action and discusses future development directions. We begin by outlining the clinical significance and complex pathophysiological characteristics of chronic wounds. A detailed classification of silicon-based nanomaterials is then provided, including mesoporous silica nanoparticles and silicon-based composites. The review emphasizes their key roles in modulating inflammation, reducing oxidative stress, and promoting angiogenesis and tissue regeneration. In addition, we summarize recent findings from in vitro and in vivo studies, as well as updates from relevant clinical research. The biocompatibility and safety profiles of these systems are also comprehensively evaluated. Future research should focus on optimizing the synthesis of these materials and improving their long-term biosafety. Efforts should also aim to integrate multifunctional therapeutic strategies to enhance efficacy and translational potential. Moreover, large-scale, rigorously designed clinical trials are urgently needed. These studies will help build robust clinical evidence and support the practical application of silicon-based nanosystems in advanced wound care. In conclusion, silicon-based nanosystems represent a next-generation approach for wound therapy. However, further interdisciplinary research is essential to fully realize their clinical value.