Investigating the impact of substrate defects on Ga2O3/GaN-based ultraviolet photodetector by designing a common-connected electrode.

Ga2O3/GaN hybrid ultraviolet (UV) photodetector (PD) has photon-carriers generated in the Ga2O3 region and transported in the GaN layer. In this work, by designing Ga2O3/GaN UV PD with a gate metal on the Ga2O3 surface, common-connected with the cath…

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