Determining bismuth content in GaAsBi alloys by energy-dispersive X-ray spectroscopy: A case study with multiple sets of k*-factors for analytical transmission electron microscopy.

Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth,…

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