Materials horizons
Suppression of interfacial layers in ZrO2/TiN capacitors by atomic layer deposition using ligand-engineered Zr precursors for scalable DRAM.
Hyeongjun Kim, Juan Hong, Sangyeon Jeong, Kyunghun Lyu, Seungmin Jo, Seokho Cho, Juhyeong Kim, Byung-Kwan Kim, Jin-Sik Kim, Woongkyu Lee
Published: 202510.1039/d5mh01502b
Abstract
As dynamic random-access memory continues to scale down, the feasible physical thickness of the capacitor dielectric layer continuously decreases, thus, controlling the low-k interfacial layer formed at the ZrO2 dielectric/TiN electrode interface is…
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