Dalton transactions (Cambridge, England : 2003)
Pressure-induced metallization and electronic transition in a two-dimensional ferroelastic semiconductor of Nb2SiTe4 in different hydrostatic environments.
Xinyu Zhang, Lidong Dai, Haiying Hu, Meiling Hong, Bing Lv, Xuefei Liu, Juxiang Shao, Ming Yang, Shiwei Xie, Hongchun Luo, Yu Gao, Tao Wang, Miao Ren, Haonan Cheng
Published: 202610.1039/d5dt02937f
Abstract
Nb2SiTe4, a representative two-dimensional (2D) ferroelastic semiconductor, becomes research focus due to its high carrier mobility, ambipolar carrier transport, exceptional ferroelasticity and third harmonic generation response, rendering potential…
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