Physical chemistry chemical physics : PCCP
Unraveling the electronic properties of silicon carbide monolayers with Si/C vacancies.
Ekaterina V Bartashevich, Sergey A Sozykin, Vladimir G Tsirelson
Published: 202510.1039/d5cp02316e
Abstract
This study discusses the structural features and electronic properties of silicon carbide monolayers (SiCMLs) in which the loss of a neutral Si or C atom leads to the formation of vacancy defects. 2D periodic models were compared from the standpoint…
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