Nature materials
Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS2 transistors.
Saifei Gou, Yuxuan Zhu, Zhejia Zhang, Menglin Huang, Jinshu Zhang, Xiangqi Dong, Mingrui Ao, Qicheng Sun, Zhenggang Cai, Yan Hu, Yufei Song, Jiahao Wang, Haojie Chen, Yuchen Tian, Xinliu He
Published: 202610.1038/s41563-025-02470-w
Abstract
Two-dimensional semiconductors are emerging as crucial materials for the post-Moore era. However, the transition to industrial-scale applications is hindered by engineering challenges, including the contact engineering. Among different strategies, ed…
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