Nature materials
Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density.
Junyoung Kwon, Kyoung Yeon Kim, Dongwon Jang, Min Seok Yoo, Alum Jung, Dong-Su Ko, Yoonhoo Ha, Huije Ryu, Woon Ih Choi, Yeonchoo Cho, Changhyun Kim, Eunji Yang, Eun Kyu Lee, Chang-Seok Lee, Sang Won Kim
Published: 202610.1038/s41563-025-02452-y
Abstract
The foundry industry and academia are confronting the limits of Moore's Law scaling for logic transistors. Silicon field‑effect transistors (FETs) now rely on gate‑all‑around structures and ultrathin channels, even at the cost of decreased carrier mo…
Preview only. Read the full abstract at the source