Nature communications
Metallic tellurium for p-type contacts of two-dimensional MoTe2 field-effect transistors.
Yuhan Zhu, Feng Wang, Shuhui Li, Chen Shen, Yuchen Cai, Tao Yan, Fuyuan Zhang, Yanrong Wang, Xueying Zhan, Kai Xu, Hao Wang, Hongbin Zhang, Zhenxing Wang, Jun He
Published: 202610.1038/s41467-025-67948-2
Abstract
While significant progress has been made in the fabrication of n-type contacts for two-dimensional field-effect transistors (2D FETs), the development of high-performance p-type counterparts using compatible techniques remains insufficient to realize…
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