ACS nano
van Hove Source for Ultralow Power Field-Effect Transistors.
Baizhe He, Hang Zhou, Yuqi Zhuang, Zebin Liu, Xiaobing Ma, Boxiang Zhang, Jiankun Li, Tian Pei, Zaizhe Zhang, Xiaosong Deng, Xiaobo Lu, Chuanhong Jin, Fei Liu, Kaili Jiang, Jia Si
Published: 202610.1021/acsnano.5c17157
Abstract
Field-effect transistors (FETs) with sub-60 mV/decade subthreshold swing (SS) at room temperature are highly sought after for enabling next-generation ultralow-power integrated circuits (ICs). We present a van Hove source (VHS) FET that exploits the…
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