ACS nano
Enhancing Physical Randomness in Ta2O5/HfO2 Based Memristors through Electrode Engineering for True Random Number Generation.
Bei Jiang, Yong Wang, Yahui Qing, Yongtao Shan, Ruxin Li, Zihan Wu, Zihao Chen, Liao Zhao, Desheng Cai, Peiliang Su, Xingqiang Liu, Kenli Li, Hao Huang, Xingan Jiang, Xiangdong Yang
Published: 202510.1021/acsnano.5c05204
Abstract
True random number generators (TRNGs) based on memristors utilize inherent switching variability to generate unpredictable true random numbers. Herein, the performance and instability of Ta2O5/HfO2/Pt based memristors induced by their top electrodes…
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