Dual Effect of Defect-Free AlOxFy Layer for Suppressing Hydrogen Influence in Indium-Gallium-Zinc Oxide Thin-Film Transistors.

It has been demonstrated that mixing atomic-layer deposition subcycles of aluminum oxide (Al2O3) and aluminum fluoride (AlF3) at an optimal ratio yields an aluminum oxyfluoride (AlOxFy) compound with virtually no internal defects. By systematically a…

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