Nano letters
Straining Monolayer MoS2 Transistor on a Flat and Rigid SiO2 Substrate.
Jinghui Gao, Yunxin Li, Kaixin Niu, Yang Chen, Xiao Liu, Shuimei Ding, Quanyang Tao, Weiqi Gao, Zikun Li, Zehao Li, Longbin Zhang, Donglin Lu, Yiliu Wang, Yuan Liu
Published: 202510.1021/acs.nanolett.5c04916
Abstract
Strain engineering has played a key role in modern silicon electronics since 90 nm technology. Achieving similar advances within two-dimensional (2D) semiconductors is essential for their lab-to-fab transition. However, adapting silicon-based strain…
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