Strain Engineering in Graphene at the Nanometer Scale.

The ability to induce and characterize strain in the atomic lattice of 2D materials, localized within only a few nanometers around specific positions, is a major challenge for the development of straintronics. In this work, the interaction between Si nanoparticles and the surface of graphene/Ru(0001) is employed to induce local strain in the latter. The strain field has been mapped at the nanoscale by scanning tunneling microscopy (STM), using the moiré pattern intrinsic to graphene/Ru(0001) surfaces as a magnifying lens. The induced strain is found to be confined within only a few nanometers around each nanoparticle. To achieve more accurate control, strain engineering at the nanometer scale was successfully performed by manipulating nanoparticles through the STM tip. This approach to controlled strain could provide a key tool for exploring new physics arising from strain in 2D materials.