Low Power FA2PbI4/SiO2 Bilayer Memristors with Pt Nanoparticles Exhibiting Reconfigurable Synaptic and Neuron Properties for Compact Optoelectronic Neuromorphic Systems.

The development of artificial neural networks with biorealistic computing properties represents a frontier in the neuromorphic computing era. However, achieving compact and energy-efficient integration of silicon-based synapses and neurons remains challenging due to complexities in their electrical circuits. Herein, we fabricated a low power Ag/SiO2/FA2PbI4/Pt nanoparticles/ITO bilayer memristor with reconfigurable properties, exhibiting dual switching modes and neuromorphic functionalities. These effects were experimentally investigated through transient response and endurance measurements, while valuable insights were provided using a comprehensive numerical model. The SiO2/FA2PbI4 and FA2PbI4/Pt nanoparticle interfaces played a critical role in regulating ion migration, stabilizing filament dynamics and enhancing device reliability. A compact optoelectronic neuromorphic system was demonstrated by integrating synaptic and neuronal elements, enabling precise control of the firing activity. An ultralow power consumption (∼10 fJ/spike) was achieved, comparable to that of the human brain and state-of-the-art memristive technologies, thereby paving the way for energy-efficient optoelectronic computing platforms.