Langmuir : the ACS journal of surfaces and colloids
Scalable Isotropic Atomic Layer Etching of SiO2 via Thermo-Radical Activation.
Min Kyun Sohn, Jieun Kim, Seong Hyun Lee, Sun Kyu Jung, Jin-Ha Kim, Subin Heo, Sang-Hoon Kim, Jeong Woo Park, Dongwoo Suh
Published: 202610.1021/acs.langmuir.5c05255
Abstract
Wafer scale atomic layer etching (ALE), one of the key fabrication processes of both cutting-edge gate-all-around (GAA) and complementary field-effect transistors, is essential for the implementation of a 3D gate stack where a few nanometer-thick gat…
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