The journal of physical chemistry letters
ALD-Driven Ultrathin IGZO Neuromorphic Transistors with Defect-Engineered 1/f Noise for Stable Multimodal Information Encryption.
Jiawei Yang, Bingyan Wang, Bo He, Peng Chen, Haifeng Xu, Shanshan Jiang, Huanhuan Wei, Gang He
Published: 202610.1021/acs.jpclett.5c03934
Abstract
Ultrathin neuromorphic transistors with sub-10 nm indium-gallium-zinc oxide (IGZO) channels and 20 nm Al2O3 gate dielectrics have been fabricated via low-temperature (250 °C) atomic layer deposition (ALD), achieving conformal interfaces critical for…
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