Global Potential Energy Surface Exploration of In-Ga-Zn-O (IGZO) Reveals Ga-Rich Layered Channel Material.

C-axis aligned crystalline indium-gallium-zinc oxides (CAAC-IGZOs) with layered phase are widely utilized as functional tunnel material for thin-film transistors (TFTs). Their performance, i.e., stability or mobility etc., of IGZO strongly depends on…

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