Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Atomic-Scale Mechanisms of Multi-Resistance States in HfOx-Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies.
Wen Sun, Yuyan Wang, Ruofei Hu, Yuyao Lu, Jun Xu, Xinyi Li, Bin Gao, He Qian, Jianshi Tang, Huaqiang Wu
Published: 202510.1002/advs.202518252
Abstract
The stability of multilevel resistive switching in HfOx-based RRAM is crucial for enhancing matrix-vector multiplication efficiency in computing-in-memory architectures, yet precise control over conductive filament formation is limited by an incomple…
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