Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Damage-Free Full-Thickness Dicing of Ultra-Thin GaAs Wafers Using a Femtosecond Laser with Low Residual Stress.
Shunshuo Cai, Yankang Ding, Minxia Ding, Qi Song, Zhe Zhang, Siwei Zhang, Kunpeng Zhang, Yu Hou, Song Yue, Haiyan Shi, Man Li, Wenrui Duan, Zichen Zhang
Published: 202510.1002/advs.202515347
Abstract
Gallium arsenide (GaAs) is a widely used semiconductor material due to its low-temperature coefficient and high absorption efficiency. However, its hardness and brittleness create challenges in wafer-level packaging, especially for large-size and ult…
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