Advanced materials (Deerfield Beach, Fla.)
Ultra-Low Electric Field Induced Volatile Resistive Switching in Hole-Doped MgTi2O4.
Priyanka Maji, Aminur Rahaman, Jayjit Kumar Dey, Sourav Chowdhury, Samyabrata Paria, Moritz Hoesch, Ayan Roy Chaudhuri, Debraj Choudhury
Published: 202610.1002/adma.202518981
Abstract
The intriguing concept of electric-field-induced resistive breakdown in Mott insulators offers promising opportunities for Mottronics devices and memristors while serving as a unique platform to explore non-equilibrium phenomena and underlying micros…
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