Advanced materials (Deerfield Beach, Fla.)
Unraveling In-Plane Crystallographic Anisotropy-Dependent Memory Performance In Van Der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors.
Jong-Hyun Kim, Seung-Hwan Kim, Hyeong-Kyu Jin, Deji Akinwande, Hyun-Yong Yu
Published: 202510.1002/adma.202517849
Abstract
The ferroelectric semiconductor field-effect transistors (FeS-FETs) based on α-In2Se3 emerge as promising non-volatile memory devices. However, the intrinsic in-plane (IP) crystallographic anisotropy of α-In2Se3 introduces orientation dependence, lea…
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